Futurewafer’s Silicon-Carbide Schottky diodes range from 650-V to 1200-V – as single and dual diodes – and feature unbeatable reverse recovery characteristics and improved V_F. Available in a wide variety of packages , from D²PAK to TO-247 and the insulated TO-220AB / AC, they offer great flexibility to designers looking for efficiency, robustness and fast time-to-market.
Futurewafer’s SIC Schottky diodes show a significant power-loss reduction and are commonly used in hard-switching applications such as high-end-server and telecom power supplies , while also intended for solar inverters , motor drives and uninterruptible power supplies (UPS).

Features of the 3rd generation SiC SBD
1. V_F × Qc  trade-off improvement
We have improved the Forward voltage (V_F) and the Total capacitive charge (Q_C) trade-off by adopting the new Schottky metal.

2. High surge current capability 
We have achieved higher Non-repetitive peak forward surge current (I_FSM) by improving the conventional structure.

3. Low reverse current (leakage current)
By using the third generation structure, we can achieve lower reverse current (I_R) similar to the second generation even though the forward voltage is lower.

Main characteristics: 

• High efficiency of the power converter (thanks to low forward conduction and switching losses)
• High power integration with dual diodes for reduced PCB form factor
• Significant reduction of power converter size and cost
• Low EMC impact, for simplified certification and reduced time-to-market
• Natural high robustness ensuring very high reliability

Key applications

Industrial and consumer applications

• Switch Mode Power Supply (SMPS)
• AC-DC and DC-DC converters
• Battery charging infrastructure 
• Server and telecom power supply
• Uninterruptible Power Supply (UPS)
• Photovoltaic inverters