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07 September 2025
Small Signal Schottky and Switching Diodes Line Up In Ultra Compact DFN1006 Package
Feature
● Only 10% PCB board space consumption compared with traditional SOD/T packages
● Better thermal / power performance than with traditional SOD/T packages
● Soldering can be checked by standard visual inspection. No X-RAY inspection necessary to meet automotive AOI requirements
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07 September 2025
台灣未來芯薄型高散熱[SMA-HE封裝]二極體 產品系列擴增,助力應用小型化
Press Release:
從車電裝置、工控裝置到消費性電子裝置等應用中,二極體被廣泛運用於電路整流、保護和開關用途,為了削減安裝面積,市場上開始要求減少二極體的封裝尺寸。此外,在這些應用中,還需要使用更高性能的二極體來降低功耗。而另一方面,當減少二極體的封裝尺寸時,背面電極和樹脂表面積也會減少,從而導致散熱性變差。對此,Futurewafer的SMA-HE封裝透過擴大背面電極和改善散熱路徑,提高了散熱性能。封裝小型化的同時,實現與傳統封裝同級電氣特性。 Taoyuan City , Taiwan. - 08. AUG. 2025
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14 January 2025
DC低壓高功率保護元件 NVS2M Series
高功率密度平面技術製程
(High density planar technology)
最高達2400W(8/20uS) / 150W(10/1000uS)
造就更小封裝 , SOD323 / DFN1610
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26 December 2024
The new generation of FRED ultra-fast recovery diodes
Over the past 5 years, power topologies have changed fundamentally. Various power supply structures are bulky now, and there is no 50 / 60Hz power transformer. more necessary. These traditional transformers account for a major part of the volume and conventional power supplies by weight. today they have been replaced using smaller and lighter planar transformers (Futurewafer made), Its core material now consists of sintered ferrite instead of iron sheets
Operating frequency up to 250 kHz. For the same power rating, high operating frequency significantly reduces weight and volume converter. This development is significantly influenced by novelty, Fast switching power transistors, e.g. as MOSFETS or IGBTs, operate at high blocking voltage (VCES > 600 V). However , almost all topologies are equipped with these transistors also require ultra-fast diode response to conduct load current and rectify AC output when DC voltage is required. The switching behavior of these diodes must be tailored to match the switching properties of transistors.
This applies not only to switching power supplies, but also to inverter circuits. For these inverters, the PWM frequency chosen by the manufacturer is around 8 kHz to create a smooth sinusoidal waveform of the output current or use a PWM frequency that operates above the audible level of 20 kHz.
In addition to its characteristics, there are free power transfer switches , pass diodes and freewheeling diodes
Regarding power loss, efficiency and operational safety of the entire plant.
They also play a decisive role in improving SMPS efficiency and reducing inverter losses , a clear requirement for ultrafast diodes use. Ultrafast Diode Description All functions are included here modern epitaxial diodes , e.g. soft recovery , have low reverse recovery current IRM and short reverse recovery times.
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07 July 2024
Green Power- Silicon-Carbide (SiC) Schottky Barrier Diodes
Silicon Carbide (SiC) Schottky Barrier Diodes 曾經的“中流砥柱”Si 功率元件已日趨面臨其發展的材料極限,難以滿足當今社會發展對於 高頻、 高溫、高功率、高能效、耐惡劣環境以及輕便小型化的新需求。 以 SiC 為代表的第三代半導體材料憑藉其優異屬性,將成為突破口,正在迅速崛起。
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