高功率密度平面技術製程
(High density planar technology)
最高達2400W(8/20uS) / 150W(10/1000uS)
造就更小封裝 , SOD323 / DFN1610

Over the past 5 years, power topologies have changed fundamentally. Various power supply structures are bulky now, and there is no 50 / 60Hz power transformer. more necessary. These traditional transformers account for a major part of the volume and conventional power supplies by weight. today they have been replaced using smaller and lighter planar transformers (Futurewafer made), Its core material now consists of sintered ferrite instead of iron sheets
Operating frequency up to 250 kHz. For the same power rating, high operating frequency significantly reduces weight and volume converter. This development is significantly influenced by novelty, Fast switching power transistors, e.g. as MOSFETS or IGBTs, operate at high blocking voltage (VCES > 600 V). However , almost all topologies are equipped with these transistors also require ultra-fast diode response to conduct load current and rectify AC output when DC voltage is required. The switching behavior of these diodes must be tailored to match the switching properties of transistors.
This applies not only to switching power supplies, but also to inverter circuits. For these inverters, the PWM frequency chosen by the manufacturer is around 8 kHz to create a smooth sinusoidal waveform of the output current or use a PWM frequency that operates above the audible level of 20 kHz.
In addition to its characteristics, there are free power transfer switches , pass diodes and freewheeling diodes
Regarding power loss, efficiency and operational safety of the entire plant.
They also play a decisive role in improving SMPS efficiency and reducing inverter losses , a clear requirement for ultrafast diodes use. Ultrafast Diode Description All functions are included here modern epitaxial diodes , e.g. soft recovery , have low reverse recovery current IRM and short reverse recovery times.

Silicon Carbide (SiC) Schottky Barrier Diodes 曾經的“中流砥柱”Si 功率元件已日趨面臨其發展的材料極限，難以滿足當今社會發展對於 高頻、 高溫、高功率、高能效、耐惡劣環境以及輕便小型化的新需求。 以 SiC 為代表的第三代半導體材料憑藉其優異屬性，將成為突破口，正在迅速崛起。

近年來，在全球「無碳社會」和「碳中和」等環保風潮中，電動車（xEV）得以日益普及。為了進一步提高系統效率，各種車電裝置的逆變器，以及轉換器電路中使用的功率半導體等，也出現了多樣化需求，超低損耗的SiC功率元件（SiC MOSFET、SiC SBD等），和傳統的Si功率元件（IGBT、SJ-MOSFET等）也都正持續大幅度的技術革新。 「FWSC85N65HBE」是Hybrid型IGBT產品，在IGBT的回流單元（飛輪二極體）中採用了Futurewafer的低損耗SiC蕭特基二極體（SiC SBD），成功降低了傳統IGBT產品導通時的切換損耗。

FutureWafer’s FSE838 series of ESD protection devices utilizes a deep snap back, SCR type structure. By using this technology, the potential for a latch up condition was taken into account and the below recommendations to design a latch up free device were implemented. The main parts in the series that service the three main interfaces discussed above, shown in Table 1, were designed with parameters to guarantee latch up free designs in USB 3.X/2.0 and HDMI 1.4/1.3 interfaces respectively.System level ESD testing was performed on all devices to verify that no latch up conditions occurred.