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650V , 20A , TO247 SiC Schottky diode-FWSC20065BG
FW’s silicon carbide diodes range from 650-V to 1200-V – as single and dual diodes – and feature unbeatable reverse recovery characteristics and improved VF. Available in a wide variety of packages, from D²PAK to TO-247 and the insulated TO-220AB/AC, they offer great flexibility to designers looking for efficiency, robustness and fast time-to-market. FW’s SiC Schottky diodes show a significant power-loss reduction and are commonly used in hard-switching applications such as high-end-server and telecom power supplies, while also intended for solar inverters, motor drives and uninterruptible power supplies (UPS).
Technical Info
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Repetitive reverse voltage
650-V
Continuous forward current
20-A, TC = 145-°C
Diode forward voltage
1.7-V, T j = 25°C
Reverse current
50-uA, T j = 25°C
Peak surge current
175-A,TC = 25-°C,tp = 10-ms, Half sine wave
Operating temperature
175°C
Configure
Signal
Package
TO247-2L
Total capacitive charge
56-nC , VR = 400-V,di / dt = 500-A/us, IF = 10-A
Total capacitance
97-pF , VR = 400-V,f = 1-MHZ
Power dissipation
187-W , TC = 25-°C
Non-repetitive forward current
100-A, TC = 25-°C,tp = 10-ms, Half sine wave,D=0.3
Marking
FW20065
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