The Latest Low V_F / Low I_R balanced Trench MOS Barrier Schottky Rectifiers

General description
Schottky diodes feature a low forward voltage drop and high switching speed. This makes them well suited to a wide variety of applications, such as the boost diode in power conversion circuits.
Traditionally, the trade-offs associated with the use of Schottky diodes have forced the designer to choose between optimizing for forward voltage, leakage current, and the reverse blocking voltage.
Now, a new generation of trench Schottky diodes is helping to reduce the impact of the trade-offs, and to offer greater capabilities than planar counterparts. Designers using trench Schottky diodes can benefit from reduced switching losses, a wider safe operating area (SOA), and lower reverse-recovery charge.

Advanced Schottky Products for Applications.
This new high-temperature trench diode family delivers Schottky’s renowned low V_F and fast t_RR while also maintaining low leakage (IR) that is comparable to existing “Schottky-like” products and is Better in most cases. The combination of low V_F and low I_R optimizes power consumption in energy-sensitive applications, which is one of the hallmarks of these small-signal trench Schottky diodes.
This technology, in turn, enables engineers to take advantage of improvements in applications with high requirements on efficiency and power consumption. Wireless charger applications are an example.
As the energy coupled through wireless transmission into the power receiving Unit (PRU) is relatively small, all further losses in converting the energy should be minimized in order to get the best charging rate. A critical element in this chain is the bridge rectifier which converts the alternating current waveform into a DC power signal. This is then further processed by a DC/DC converter to bring the voltage to compatible levels for charging the battery of the wireless device. The bridge rectifier needs to therefore have the lowest impact on power dissipation, which means that forward voltage and current losses should be minimized as they reduce the precious limited power transmitted by the Power Transmitting Unit (PTU).

In summary, trench rectifiers are a suitable choice if an attractive trade-off between forward voltage drop and leakage current is required. Trench rectifiers should also be selected in high power-density applications in which the ambient temperature is high, since they are more resistant to thermal runaway effects. For applications operating at switching speeds higher than 100 kHz, the reduced switching losses of trench devices are particularly beneficial.
Futurewafer offers 113 trench Schottky diodes with voltage ratings between 40-V and 150-V, and current ratings between 3-A and 20-A. These TBR series devices are housed in Clip Bond Flat Power packages: SOD123, SMA, SMB, SMC and TO277. These size- and thermally-efficient packages have become the industry standard for power diodes. The solid copper clip reduces the packages’ thermal resistance and optimizes the transfer of heat to the ambient environment, allowing power-system designers to realize small and compact PCB designs.