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Silicon Carbide (SiC) Schottky
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650V , 6A , DFN8080 SiC Schottky-FWSC06065FC
650V , 6A , DFN8080 SiC Schottky-FWSC06065FC
650V , 6A , TO252 SiC Schottky diode-FWSC06065BD
650V , 6A , TO220AC SiC Schottky diode-FWSC06065FC
650V , 6A , TO252 SiC Schottky diode-FWSC06065BD
650V , 6A , TO220AC SiC Schottky diode-FWSC06065FC
● No reverse recovery / No forward recovery ● 650-volts Schottky rectifier ● High frequency operation ● Temperature independent switching behavior ● Extremely fast switching ● Positive temperature coefficient on VF
Technical Info
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Repetitive Reverse Voltage
650 V, IR = 0.18 mA ,Tj = 25 °C
Continuous Forward Current
6 A , TC ≤ 154 °C
Diode Forward Voltage
1.33 V(TYP) , IF = 6 A , Tj = 25 °C
Reverse Current
0.5 uA (TYP) , VR=650 V , Tj = 25 °C
Peak Surge Current
60 A , TC = 25 °C , tp = 10 ms
Operating Temperature
175°C
Configure
Single
Total capacitive charge
21 nC , VR = 400 V , di/dt = 500 A/us , IF = 6 A , Tj=25 °C
Package
DFN8080
Total capacitance
395 pF , VR = 0 V , Tj = 25 °C , f = 1 MHZ
Power dissipation
94 W , TC = 25 °C
Marking
FWSC 06065
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