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100V , 10A , DFN5060 Ultra-Low VF Trench MOS Barrier Schottky-TBR10L100ADS
This TBR10L100ADS are Trench MOS Barrier Schottky Rectifier (TBR) provides fast switching performance in a compact thermally efficient package. The DFN package provides an excellent alternative to the SMDJ , offering thermal performance nearly as good in a package occupying less than half the board space. Its low profile makes it a good option for flat panel display and other applications with limited vertical clearance. The device offers low leakage over temperature making it a good match for applications requiring low quiescent current.
Technical Info
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Repetitive reverse voltage
100 V
Continuous forward current
10 A , Ta <= 110 °C
Diode Forward Voltage
0.64 V(TYP) , IF = 10 A
Reverse Current
50 uA(Max) , VR = 100 V , Ta = 25 °C
Peak surge current
180 A , tp<= 8.3-mS ; Square wave
Operating Temperature
-55 °C to 150 °C
Line capacitance
300 pF , VR = 10 V , f = 1 MHZ
Marking
FW TBR10L10
Package
DFN5060
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