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100V , 10A , TO252 Trench MOS Barrier Schottky -TBR10L100BDP
100V , 10A , DFN5060 Ultra-Low VF Trench MOS Barrier Schottky-TBR10L100ADS
100V , 10A , TO252 Trench MOS Barrier Schottky -TBR10L100BDP
100V , 10A , ITO220 Trench MOS Barrier Schottky-TBR10L100BCTC
100V , 10A , DFN5060 Ultra-Low VF Trench MOS Barrier Schottky-TBR10L100ADS 100V , 10A , ITO220 Trench MOS Barrier Schottky-TBR10L100BCTC
Technical Info
Repetitive Reverse Voltage
100-V
Continuous Forward Current
10-A , TC≤110°C
Diode Forward Voltage
0.75-V(MAX) , IF=10-A,Tj=25-°C
Reverse Current
50-uA(MAX) , VR=100V,Tj=25°C
Peak Surge Current
150 -A
Operating Temperature
-65-°C ~ 150-°C
ESD Level
8-KV, IEC61000-4-2,Contact
Package
TO252-3L
Marking
10L100A
Counter
H35-F
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