MENU
80V , 10A ,TO277B Trench mos barrier schottky-TBR10L080HT
100V , 8A , TO-277B Ultra-Low VF Trench MOS Barrier Schottky-TBR08LM100HT
80V , 10A ,TO277B Trench mos barrier schottky-TBR10L080HT
100V , 10A , DFN5060 Ultra-Low VF Trench MOS Barrier Schottky-TBR10L100ADS
100V , 8A , TO-277B Ultra-Low VF Trench MOS Barrier Schottky-TBR08LM100HT 100V , 10A , DFN5060 Ultra-Low VF Trench MOS Barrier Schottky-TBR10L100ADS
Technical Info
Download
Repetitive Reverse Voltage
80-V
Continuous Forward Current
10-A , TC≤115°C
Diode Forward Voltage
0.68-V , IF=10-A,Tj=25-°C
Reverse Current
25-uA , VR=80-V,Tj=25-°C
Peak Surge Current
180-A
Operating Temperature
-55°C to 150°C
ESD Level
8-KV
Package
TO277-B
Marking
F10L080
Counter
H34-F
Please select your language
Language *
TOP