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100V , 8A , TO-277B Ultra-Low VF Trench MOS Barrier Schottky-TBR08LM100HT
This TBR08LM100HT are Trench MOS Barrier Schottky rectifier (TBR) provides fast switching performance in a compact thermally efficient package. The TO-277B package provides an excellent alternative to the DPAK, offering thermal performance nearly as good in a package occupying less than half the board space. Its low profile makes it a good option for flat panel display and other applications with limited vertical clearance. The device offers low leakage over temperature making it a good match for applications requiring low quiescent current.
Technical Info
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Repetitive Reverse Voltage
100 V , Ta <= 110 °C
Continuous Forward Current
8 A , Ta <= 110 °C
Diode Forward Voltage
0.58 V (TYP). IF = 8 A , TJ = 25 °C
Reverse Current
10 uA(TYP) , VR = 100 V , TJ = 25 °C
Peak Surge Current
220 A , tp <= 8.3mS ; Square wave
Operating Temperature
-55 °C to 150 °C
Package
TO-277B
Marking
F8M10
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