Silicon Carbide (SiC) Schottky Barrier Diodes 曾經的“中流砥柱”Si 功率元件已日趨面臨其發展的材料極限，難以滿足當今社會發展對於 高頻、 高溫、高功率、高能效、耐惡劣環境以及輕便小型化的新需求。 以 SiC 為代表的第三代半導體材料憑藉其優異屬性，將成為突破口，正在迅速崛起。

近年來，在全球「無碳社會」和「碳中和」等環保風潮中，電動車（xEV）得以日益普及。為了進一步提高系統效率，各種車電裝置的逆變器，以及轉換器電路中使用的功率半導體等，也出現了多樣化需求，超低損耗的SiC功率元件（SiC MOSFET、SiC SBD等），和傳統的Si功率元件（IGBT、SJ-MOSFET等）也都正持續大幅度的技術革新。 「FWSC85N65HBE」是Hybrid型IGBT產品，在IGBT的回流單元（飛輪二極體）中採用了Futurewafer的低損耗SiC蕭特基二極體（SiC SBD），成功降低了傳統IGBT產品導通時的切換損耗。

FutureWafer’s FSE838 series of ESD protection devices utilizes a deep snap back, SCR type structure. By using this technology, the potential for a latch up condition was taken into account and the below recommendations to design a latch up free device were implemented. The main parts in the series that service the three main interfaces discussed above, shown in Table 1, were designed with parameters to guarantee latch up free designs in USB 3.X/2.0 and HDMI 1.4/1.3 interfaces respectively.System level ESD testing was performed on all devices to verify that no latch up conditions occurred.

The NE/SE 555 monolithic timing circuit is a highly stable controller capable of producing accurate time delays, or oscillation. Additional terminals are provided for triggering or resetting if desired. In the time delay mode of operation, the lime is precisely controlled by one external resistor and capacitor. For a stable operation as an oscillator, the free running frequency and the duty cycle are both accurately controlled with two external resistors and one capacitor. The circuit may be triggered and reset on falling waveforms, and the output structure can source or sink up to 200mA or drive TTL circuits.

The Latest Low VF/Low IR balanced Trench MOS Barrier Schottky Rectifiers-Schottky diodes feature a low forward voltage drop and high switching speed. This makes them well suited to a wide variety of applications, such as the boost diode in power conversion circuits.
Traditionally, the trade-offs associated with the use of Schottky diodes have forced the designer to choose between optimizing for forward voltage, leakage current, and the reverse blocking voltage.
Now, a new generation of trench Schottky diodes is helping to reduce the impact of the trade-offs, and to offer greater capabilities than planar counterparts. Designers using trench Schottky diodes can benefit from reduced switching losses, a wider safe operating area (SOA), and lower reverse-recovery charge.