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100V , 35A, DFN5060 Dual N-MOSFET-FM100N35ADP
100V , 25A, DFN5060 Dual N-MOSFET-FM100N25ADP
100V , 35A, DFN5060 Dual N-MOSFET-FM100N35ADP
100V , 40A , DFN5060 N-MOSFET-FM100N40ADN
100V , 25A, DFN5060 Dual N-MOSFET-FM100N25ADP 100V , 40A , DFN5060 N-MOSFET-FM100N40ADN
● VDS : 100-V ● ID : 35-A ● RDS(ON) < 20-m Ω , VGS = 10-V ● Low On-resistance ● Low Input capacitance ● Fast switching speed ● Low Input/output leakage ● Split gate trench Power MOSFET technology
Technical Info
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Drain-Source Voltage
100 V , VGS=0V , ID=250uA
Gate-Source Voltage
±20 V
Continuous Drain Current
35 A , TA=25°C
Pulse Drain Current
120 A , TA=25°C
Gate Threshold Voltage
1.8 V(TYP) , VGS=VDS , ID=250uA
Drain-Source Leakage Current
1.0 uA , VDS=100V , VGS=0V
Drain-Source On-Resistance
17 mΩ (TYP) , VGS=10V , ID=10A
Configure
Dual N-Channel.
Reverse Recovery Charge
95 nC , IF=10A , di/dt=100A/uS
Package
DFN5060-8L
Marking
Q100N35 FW
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