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80V , 12A , TO277B Trench MOS Barrier Schottky-TBR12M080HT
This TBR12M080HT are Trench MOS Barrier Schottky rectifier (TBR) provides fast switching performance in a compact thermally efficient package. The TO 277B package provides an excellent alternative to the DPAK , offering thermal performance nearly as good in a package occupying less than half the board space. Its low profile makes it a good option for flat panel display and other applications with limited vertical clearance. The device offers low leakage over temperature making it a good match for applications requiring low quiescent current.
Technical Info
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Repetitive Reverse Voltage
80 V , Ta ≤ 110 °C
Continuous Forward Current
12 A, Ta ≤ 110 °C
Diode Forward Voltage
0.58V , IF=12 A , Ta = 25 °C
Reverse Current
10 uA , VR=80 V , Ta=25 °C
Peak Surge Current
200 A , tp=8.3 mS
Operating Temperature
-55°C to 150°C
Package
TO277-B
Marking
F12M080
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