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120V , 3A , SMAF Ultra-Low VF Trench MOS Barrier Schottky-TBR03L120AF
General description This TBR03L120AF are Trench MOS Barrier Schottky rectifier (TBR) provides fast switching performance in a compact thermally efficient package. The SMAF package provides an excellent alternative to the DPAK , offering thermal performance nearly as good in a package occupying less than half the board space. Its low profile makes it a good option for flat panel display and other applications with limited vertical clearance. The device offers low leakage over temperature making it a good match for applications requiring low quiescent current.
Technical Info
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Repetitive Reverse Voltage
120 V , Ta <= 110 °C
Continuous Forward Current
3 A , Ta <= 110 °C
Diode Forward Voltage
0.53 V , IF = 2.5 A , TJ = 125°C
Reverse Current
20 uA(Max.) , VR = 120 V
Peak Surge Current
100 A , tp <= 8.3 mS ; Square wave
Operating Temperature
-55 to 150 °C
ESD Level
8 KV
Package
SMAF
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