GaN HEMT driving characteristics
Futurewafer's gallium nitride (GaN) power transistor product drivers use silicon MOS transistor universal driver IC. Gate threshold of gallium nitride power transistor It is fully conductive when the voltage is 2-4V; it is fully conductive when it is 5-8V; the drive circuit turns on the gate voltage 10~12V, turn-off gate voltage 0V, maximum gate source voltage 20V, only drive current 100mA.
Introduction to the structure and characteristics of GaN HEMT
Futurewafer’s gallium nitride power transistors adopt a Cascode structure. exist In the Cascode structure, the freewheeling current flows through the body diode of the silicon transistor, but due to Since silicon diodes are low voltage silicon diodes, the reverse recovery charge is very small.

Basic components of GaN HEMT driver circuit
As shown in Figure , the drive circuit consists of a gate driver, a resistor and Composed of magnetic beads (FB). By adjusting the driving resistor RGon, Ig is reduced, thereby reducing di/dt, dv/dt, reduce oscillation caused by parasitic parameters and improve the EMI characteristics of the circuit. Efficiency: Add magnetic beads FB to the drive circuit to reduce interference from the power circuit to the gate;
However, increasing RGon and FB will also increase switching losses. The values ​​of RGon and FB need to be Switching speed, switching losses, and oscillations of voltage and current during switching need to be considered. and various factors such as electromagnetic compatibility. Figure 35 and Figure 36 show the relationship between RGon and FB relationship between switching losses.