MENU
8V , 400W , DFN1006 High Current Snap Back-FHC082AD
The FHC082AD is constructed using Futurewafer’s proprietary trench process technology. The process provides low standoff voltages with significant reductions in leakage currents and capacitance over silicon avalanche diode processes. They feature a true operating voltage of 8-volts for superior protection when compared to traditional pn junction devices. The FHC082AD is in an 2-pin, RoHS/WEEE compliant, DFN1006 package. It measures 1.0 x 0.6 x 0.5mm. The leads are spaced at a pitch of 0.65mm and are finished with lead-free NiPdAu. Each device will protect one line operating at 8 volts. It gives the designer the flexibility to protect single lines in applications where arrays are not practical. They may be used to meet the ESD immunity requirements of IEC 61000– 4-2, Level 4 (±30-kV air, ±30-kV contact discharge). The combination of small size and high ESD surge capability makes them ideal for use in portable applications such as display power line protector.
Technical Info
Download
Reverse Voltage
8 V
Breakdown Voltage
8 V.(Min), It = 1-mA
Peak Pulse Current
20-A , 8/20-us, Current waveform
Junction Capacitance
200pF.(TYP), V R = 0-V,f = 1MHZ, Pin to GND
Configure
Uni-Directional
Peak Pulse Power
400-W, 8/20-us, Current waveform
ESD Level
30-KV,Contact
Package
DFN1006-2L
Marking
CD
Counter
D14-F
Please select your language
Language *
TOP