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3.6V , 60W , DFN2510 Extra low capacitance snap back ESD array-FSE8389DN
The FSE8389DN is design TVS ESD protection diode array for USB Type-C and thunderbolt 3 circuit protection. The FSE8389DN is rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4). This device features a 0.15 pF IO capacitance per channel making it ideal for protecting high-speed interfaces up to 10 Gbps such as USB 3.1 Gen 2 , thunderbolt 3 , and antenna. The low dynamic resistance and low clamping voltage ensure system level protection against transient events. The FSE838 family is offered in the industry standard DFN , SOT and SOD packages.
Technical Info
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Reverse voltage
3.6 V
Peak pulse current
5 A , 8/20 us , Current waveform
Peak pulse power
60 W , 8/20 us , Current waveform
Electrostatic discharge
20 KV,Contact
Breakdown voltage
5.5 V(Min) , It = 1 mA , I/O to GND
Leakage current
0.1 uA , V = 3.3 V , I/O to GND
Line capacitance
0.15 pF , line to line
Clamping voltage
10 V , IPP = 5 A , 8/20us , I/O to GND
Package
DFN2510-10L
Marking
8389F
Channel
4 I/O pins
Version
V4.1
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